(C) 2011 Wiley Periodicals, Inc. J Appl Polym Sci 122: 1350-1357, 2011″
“Background: Snacking is common in adolescents; however, it is unclear if there is an association between snacking and ACY-738 supplier overweight or obesity within the context of the overall diet.
Objective: This study examined the associations of snacking with
weight status and abdominal obesity in adolescents 12-18 y of age (n = 5811).
Design: We conducted secondary analyses of 24-h diet recalls and anthropometric data from the National Health and Nutrition Examination Survey (NHANES) 1999-2004. We classified adolescents by frequency of snack consumption (0, 1, 2, 3, and >= 4 snacks/d) and by the percentage of energy intake from snacks (0%, <10%, 10-19%, 20-29%, 30-39%, and >= 40%). We classified adolescents who had a body mass index (BMI) >= 85th percentile of BMI-for-age as overweight or obese. We defined abdominal obesity as a waist circumference >= 90th
percentile. We determined covariate-adjusted prevalences of overweight or obesity and abdominal obesity and odds ratios with SUDAAN software (release 9.0.1; Research Triangle Institute, Research Triangle Park, NC).
Results: Mean values of all obesity indicators studied were inversely associated with snacking frequency and percentage of energy from snacks. The prevalence of overweight or obesity and of abdominal obesity decreased with increased snacking frequency and with increased percentage of energy from snacks. Odds ratios find protocol (95% CIs) for overweight or obesity BMS-754807 cost and for abdominal obesity ranged from 0.63 (0.48, 0.85) to 0.40 (0.29, 0.57) and from 0.61 (0.43, 0.86) to 0.36 (0.21, 0.63) for 2 to >= 4 snacks/d, respectively. Reduced
risks of overweight or obesity and abdominal obesity were associated with snacking.
Conclusion: Snackers, compared with nonsnackers, were less likely to be overweight or obese and less likely to have abdominal obesity. Am J Clin Nutr 2010; 92: 428-35.”
“It was demonstrated that Fe-N martensite (alpha’) films were grown epitaxially on Fe(001) seeded GaAs(001) single crystal wafer by using a facing target sputtering method. X-ray diffraction pattern implies an increasing c lattice constant as the N concentration increases in the films. Partially ordered Fe(16)N(2) films were synthesized after in situ post-annealing the as-sputtered samples with pure Fe(8)N phase. Multiple characterization techniques including XRD, XRR, TEM, and AES were used to determine the sample structure. The saturation magnetization of films with pure Fe(8)N phase measured by VSM was evaluated in the range of 2.0-2.2 T. The post annealed films show systematic and dramatic increase on the saturation magnetization, which possess an average value of 2.6 T.