This is because the number of

confined optical modes inside the rod increases and the area of the p-GaN layer also increases as the rod diameter increases. In Figure  5b, LEE is calculated as a function of the rod height from 400 to 1,600 nm when the rod diameter is 260 nm. In this diameter, the local maximum of LEE was obtained for both modes as shown in Figure  5a. LEE for the TM mode is higher than that for the TE mode for all values of RAD001 the rod height. For both the TE and TM modes, LEE increases as the rod height increases. When the rod height is not sufficiently large, the light which escaped from the nanorod can be re-entered into the n-AlGaN layer, which results in the decrease of LEE. When the rod height is larger than 1,000 nm, LEE increases slowly and begins to saturate especially for the TM mode. Next, the dependence of LEE on the thickness of the p-GaN layer is investigated to see the effect of light absorption in the p-GaN layer of the nanorod LED. Figure  6 shows LEE of the nanorod LED as a function of the p-GaN thickness. Here, the diameter and the height of nanorods are 260 and 1,000 nm, respectively. Contrary to the case of the planar LED structure in Figure  2, the decreasing behavior of LEE with increasing

p-GaN thickness is not clearly observed. This is because the top-emitting light through the p-GaN layer has only a minor contribution to LEE of nanorod LED structures. However, the variation of LEE with p-GaN thicknesses is still observed. This is related with the effect of resonance modes as discussed in the results of Figure  5a. The resonant condition of a nanorod structure selleck screening library can be affected by the p-GaN layer thickness. The result of Figure  6 implies that the control of the thickness of the p-GaN layer is also important to obtain high LEE. In this case, the local maximum of LEE is expected when the p-GaN thickness is approximately 100 nm for both the TE and TM modes. find more Figure 6 LEE versus p-GaN thickness of the nanorod LED structure. LEE is plotted as a function of

Niclosamide the p-GaN thickness for the TE (black dots) and TM (red dots) modes. The diameter and height of simulated nanorods are 260 and 1,000 nm, respectively. Finally, the dependence of LEE on the refractive index of AlGaN material is investigated. Although the refractive index of 2.6 has been used up to now, there is uncertainty in the refractive index of AlGaN especially for the deep UV wavelengths. Moreover, the refractive index of III-nitride materials is generally anisotropic, which means that the refractive index can be different for each polarization. However, the optical anisotropy in AlGaN materials is not so significant; the difference in the refractive index for the TE and TM modes has been reported to be less than 0.1 in AlGaN materials [24–26]. Figure  7 shows LEE for the TE and TM modes as a function of the refractive index of AlGaN when the rod diameter and height are 260 and 1,000 nm, respectively.