Ga-11(0) N-89 Schottky

diodes IEEE T Electron Dev 2001,

Ga-11(0).N-89 Schottky

diodes. IEEE T Electron Dev 2001, 48:573–580.CrossRef 21. Zhou Y, Wang MLN0128 manufacturer D, Ahyi C, Tin CC, Williams J, Park M, Williams NM, Hanser A, Preble EA: Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier. J Appl Phys 2007, 101:024506–024506–4.CrossRef 22. Kalinina EV, Kuznetsov NI, Dmitriev VA, Irvine KG, Carter CH: Schottky barriers on n-GaN grown on SiC. J Electron Mater 1996, 25:831–834.CrossRef 23. Song YP, Vanmeirhaeghe RL, Laflere WH, Cardon F: On the difference in apparent barrier height as obtained from capacitance-voltage and current–voltage-temperature measurements on Al/P-Inp Schottky barriers. Solid State Electron 1986, 29:633–638.CrossRef 24. Yildirim N, Turut A: A theoretical analysis together with experimental data of inhomogeneous Schottky barrier diodes. Microelectron Eng 2009, 86:2270–2274.CrossRef

25. Mamor M: Interface gap states and Schottky barrier inhomogeneity at metal/n-type GaN Schottky contacts. J Phys-Condens Mat 2009, 21:335802.CrossRef 26. Lin YJ: Origins of the temperature dependence of the series resistance, ideality factor and barrier height based on the thermionic emission model for n-type GaN Schottky diodes. Thin Solid Films 2010, 519:829–832.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions AK carried out the research, drafted this manuscript. SA contributed in device fabrication. MCA is the research collaborator who provided experimental facilities. RS is PhD supervisor of NVP-BEZ235 cost AK. The manuscript was sent to all contributors. All authors read and Ribose-5-phosphate isomerase approved the final manuscript.”
“Background Reliable and

efficient contacts are an important aspect of device design at the nanoscale level. Historically, the contacts in the micron-scale devices have only been part of the overall device design for minimizing the contact resistance based on Schottky barrier height [1–3]. At the nanoscale level, however, the influence of contacts on the transport channel is so important that an equal or often times even more effort is spent on the contact and interface design [4, 5]. In various nanoscale devices, the contacts even dominate the transport characteristics [6, 7]. While various novel contacts exist at the nanoscale with unique density of states, the simplest ones are the ohmic contacts used to inject and extract the charge carriers. However, in addition to the atomic roughness and grain boundaries, such contacts suffer from electromigration or filament formation, which may deteriorate the device characteristics and lead to reliability issues [8]. One of the grand challenges thus for the nanoscale design is to provide smooth and reliable contact to nanomaterials, being free from electromigration and any other non-ideal effects. In this paper, our objective is to explore graphene [9, 10] nanomembranes as a candidate for such contacts.

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