CrossRef 12. Hafez H, Wu J, Lan Z, Li Q, Xie G, Lin J, Huang M, Huang Y, Abdel-Mottaleb

MS: Enhancing the photoelectrical performance of dye-sensitized solar cells using TiO 2 :Eu 3 + nanorods. Nanotechnology 2010, 21:415201–415206.CrossRef 13. Liu JF, Yao QH, Li YD: Effects of downconversion luminescent film in dye-sensitized solar cells. Appl Phys Lett 2006, 88:173119–173123.CrossRef 14. Yun JJ, Jung HS, Kim SH, Vaithianathan V, Jenekhe SA, Han EM: Chlorophyll-layer-inserted poly(3-hexyl-thiophene) solar cell having a high selleck light-to-current conversion efficiency up to 1.48%. Appl Phys Lett 2005, 87:123102.CrossRef SAHA HDAC 15. Huang XY, Wang JX, Yu DC, Ye S, Zhang QY: Spectral conversion for solar cell efficiency enhancement using YVO 4 :Bi 3+ , Ln 3+ (Ln = Dy, Er, Ho, Eu, Sm, and Yb) phosphors. J Appl Phys 2011,109(11):113526–113527.CrossRef 16. Chai R, Lian H, Yang P, Fan Y, Hou Z, Kang X, Lin J: In situ preparation and luminescent properties of LaPO 4 :Ce MK-0518 mw 3+ , Tb 3+ nanoparticles and transparent LaPO 4 :Ce 3+ , Tb 3+ /PMMA nanocomposite. J Colloid Interface Sci 2009, 336:46–50.CrossRef 17. Song WS, Choi HN, Kim YS, Yang HS: Formation of green-emitting LaPO4:Ce, Tb nanophosphor layer and its application to highly transparent plasma displays. J Mater Chem 2010, 20:6929–6934.CrossRef 18. Pankratov V, Popov AI, Kotlov A, Feldmann C: Luminescence

of nano- and macrosized LaPO 4 :Ce, Tb excited by synchrotron radiation . Opt Mater

2011, 33:1102–1105.CrossRef 19. Guo W, Shen YH, Boschloo G, Hagfeldt A, Ma TL: Influence of nitrogen dopants on N-doped TiO 2 electrodes and their applications in dye-sensitized solar cells. Electrochim Acta 2011, 56:4611–4617.CrossRef 20. Xie GX, Lin JM, Wu JH, Lan Z, Li QH, Xiao YM, Yue GT, Yue HF, Huang ML: Application of upconversion luminescence in dye-sensitized solar cells. Chin Sci Bull 2011, 56:96–101.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions CKH and JJY performed UV–vis spectroscopic study and I-V result analysis. HSK fabricated the DSSCs. EMH performed the photoluminescence selleck kinase inhibitor analysis. KHP drafted the manuscript. All authors read and approved the final manuscript.”
“Background One-dimensional semiconductor nanostructures such as nanotubes and nanowires (NWs) are being actively investigated for applications in electronic, photonic, and sensor devices [1]. Group IV semiconductor NW-based devices are attractive because of their compatibility with the existing Si complementary metal oxide semiconductor (CMOS) integrated circuit technology. Therefore, group IV NWs such as Ge/GeO x can also be used for nanoscale nonvolatile memory applications because they are compatible with CMOS technology. Resistive random access memory (RRAM) devices have received considerable interest recently because of their high performance and potential scalability [2–8].