The thickness of the surface damaged layer is dependent on the treatment temperature. The thickness of the surface damaged Selleckchem CUDC-907 layer was estimated by spectroscopic

ellipsometry. A schematic of the structure used for the analysis is shown in Figure 5. The Tauc-Lorentz model was applied to the optical modeling of the Si-QDSL layer, and the surface damaged layer was assumed to be the effective medium approximation (EMA) layer in which 50% void exists. The estimated thicknesses of the Si-QDSL layers T, the thicknesses of the surface damaged layers T s , and the mean square error (MSE) of each fitting are summarized in Table 1. T s of an as-annealed Si-QDSL was approximately 2 nm, while the T s of the treated Si-QDSLs drastically increased, indicating that the Si-QDSL structure in the surface region was broken by the atomic hydrogen. Figure 5 Schematic of the structure of Si-QDSLs after HPT for the parameter fitting of spectroscopic ellipsometry. Table 1 Thicknesses estimated by fitting of the spectroscopic ellipsometry measurements of Si-QDSLs Parameters 300°C 400°C 500°C 600°C MSE 11.56 12.22 13.37 13.30 T s (nm) 33.1 11.5 15.2 6.5 T (nm) 167.7 212.8 224.7 246.1 The thicknesses T and T s strongly depend on the treatment temperature. T decreases as the treatment temperature increases;

this tendency is related to the hydrogen concentration at the near-surface for each treatment temperature. A large amount of hydrogen introduced into amorphous silicon contributes to the structural reconstruction by breaking the weak Si-Si bonds [28, 29]. Further, surface morphologies were measured SGC-CBP30 cost by AFM. The root mean square (RMS) surface roughness of the samples is shown

in Figure 6. RMS surface roughness is almost independent of the treatment Pregnenolone temperature, whereas the damaged layer thickness measured by spectroscopic ellipsometry decreased with treatment temperature, indicating that HPT at low temperature introduces a damaged layer with lower refractive index than that of Si-QDSL. To investigate further, TEM observations of the Si-QDSLs were conducted. Figure 7a,b shows TEM images of the 350°C and 600°C treatment samples, and Figure 7c,d shows the magnified images of each sample. In the magnified images, existence of the Si-QDs is indicated using red circles. The irradiated electrons are transmitted through the sample without scattering in the white region, showing that the material density at the near surface is extremely low in the white region. Detailed analysis of the TEM images revealed that the two periods of MDV3100 cell line superlattice layers were completely removed by 350°C HPT. Two or three periods of superlattice layers were found to be damaged. On the other hand, for the 600°C treatment sample, no removal of the layers was observed during the HPT treatment; only the one-period superlattice layer was damaged. This result agrees with the thickness of the damaged layer estimated by the spectroscopic ellipsometry.